The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to pass US$1 billion in 2021, energized by demand from hybrid & electric...

China-based Leadrive Technology, specializing in third-generation semiconductor power modules for electric vehicles, has teamed up with Japan's IDM Rohm Semiconductor to set up an...

STMicroelectronics has signed a multi-year silicon carbide (SiC) wafers supply agreement with SiCrystal, a ROHM group company, according to the companies.

STMicroelectronics has announced the closing of the full acquisition of Swedish silicon carbide (SiC) wafer manufacturer Norstel AB. ST exercised its option to acquire the remaining...

GlobalWafers has disclosed it has inaugurated the second plant of its wholly-owned subsidiary MEMC Korea Company (MKC), which is scheduled to start volume production of 12-inch silicon...

Cree and STMicroelectronics have announced the expansion and extension of an existing multi-year, long-term silicon carbide wafer supply agreement to more than US$500 million. The...

Silicon carbide (SiC) substrate quotes are likely to fall by over 20% in 2020 due to constant capacity expansions at major suppliers and impacts of the US-China tariff war, according...

Cree has announced plans to build a new automotive-qualified 200mm power and RF wafer fabrication facility in Marcy, New York, complemented by its mega materials factory expansion...

A Japan-based vendor reportedly is looking for a buyer for its automotive IGBT manufacturing lines from among makers in Taiwan and China, according to industry sources.

Taiwan's Materials Analysis Technology (MA-tek), after gaining a solid presence in the silicon-based materials analysis business, is aggressively venturing into the analysis market...

Infineon Technologies has recently released its CoolGaN devices, which have attracted orders from Eltek, a Delta Electronics Group company, for datacenter and server applications,...

International IDMs including STMicrolectronics, Infineon and TI are aggressively developing power devices using third-generation compound semiconductor materials silicon carbide (SiC)...

Wafer thinning technology is expected to play an increasingly crucial role in Taiwan's power discrete device supply chain, as the technology can work well to lower resistance and...

X-Fab has announced plans to double their 6-inch silicon carbide (SiC) process capacity at its fab in Lubbock, Texas in response to increased customer demand for high-efficiency power...

Chengdu Xingu Industrial Parks, a mega complex located in Shuangliu District of the largest city in the midwestern area of China, is moving at full throttles to build semiconductor...

With silicon carbide (SiC) emerging as an increasingly popular third-generation semiconductor material for car-use power devices and 5G networks, international major IDMs such as...

While silicon remains the mainstream power semiconductor material, silicon carbide (SiC) and gallium nitride (GaN) are seen more suitable for power semiconductor devices needed by...

Analog/mixed-signal IC foundry X-Fab Silicon Foundries has announced the availability of its silicon carbide (SiC) offering from its wafer fab in Lubbock, Texas.

The Department of Resources Engineering under National Cheng Kung University in southern Taiwan has developed a method to separate high-purity silicon and silicon carbide from silicon...

Cree, Inc., a market leader in silicon carbide (SiC) power devices, announces a new family of silicon carbide (SiC) Schottky diodes optimized for performance. Cree is advancing the...

Prices of China-made silicon carbide (SiC), a material used in slicing solar-grade silicon ingots, have increased by 10% to NT$140-200 (US$4.4-6.3)/kg, according to sources with Taiwan-based...

Prices of silicon carbide, a material for solar wafer cutting, have jumped sharply since last year, as China, the biggest supplier, has imposed export quotas on the material, according...