A Japan-based vendor reportedly is looking for a buyer for its automotive IGBT manufacturing lines from among makers in Taiwan and China, according to industry sources.

Taiwan's Materials Analysis Technology (MA-tek), after gaining a solid presence in the silicon-based materials analysis business, is aggressively venturing into the analysis market...

Infineon Technologies has recently released its CoolGaN devices, which have attracted orders from Eltek, a Delta Electronics Group company, for datacenter and server applications,...

International IDMs including STMicrolectronics, Infineon and TI are aggressively developing power devices using third-generation compound semiconductor materials silicon carbide (SiC)...

Wafer thinning technology is expected to play an increasingly crucial role in Taiwan's power discrete device supply chain, as the technology can work well to lower resistance and...

X-Fab has announced plans to double their 6-inch silicon carbide (SiC) process capacity at its fab in Lubbock, Texas in response to increased customer demand for high-efficiency power...

Chengdu Xingu Industrial Parks, a mega complex located in Shuangliu District of the largest city in the midwestern area of China, is moving at full throttles to build semiconductor...

With silicon carbide (SiC) emerging as an increasingly popular third-generation semiconductor material for car-use power devices and 5G networks, international major IDMs such as...

While silicon remains the mainstream power semiconductor material, silicon carbide (SiC) and gallium nitride (GaN) are seen more suitable for power semiconductor devices needed by...

Analog/mixed-signal IC foundry X-Fab Silicon Foundries has announced the availability of its silicon carbide (SiC) offering from its wafer fab in Lubbock, Texas.

The Department of Resources Engineering under National Cheng Kung University in southern Taiwan has developed a method to separate high-purity silicon and silicon carbide from silicon...

Cree, Inc., a market leader in silicon carbide (SiC) power devices, announces a new family of silicon carbide (SiC) Schottky diodes optimized for performance. Cree is advancing the...

Prices of China-made silicon carbide (SiC), a material used in slicing solar-grade silicon ingots, have increased by 10% to NT$140-200 (US$4.4-6.3)/kg, according to sources with Taiwan-based...

Prices of silicon carbide, a material for solar wafer cutting, have jumped sharply since last year, as China, the biggest supplier, has imposed export quotas on the material, according...