With the transition to extreme ultraviolet (EUV) lithography, logic IC manufacturing processes successfully entered the 5nm node in 2020 and moved forward to the 3nm node in 2022.
However, as advanced manufacturing process technologies become increasingly challenging and the costs of IC development keep rising, foundry customers' schedules to adopt new-generation manufacturing processes have been extended from two years to 2.5 to three years. At this pace, advanced manufacturing processes are set to enter the 1nm node in 2031.
In consideration of the limitation of fin field-effect transistors (FinFETs) in terms of manufacturing technology, material and transistor performance under the miniaturization trend, the three leading foundries - TSMC, Intel and Samsung - have plans to migrate to new transistor structures at sub-3nm nodes.
Table 1: Volume production roadmap of advanced nodes for logic ICs
Table 4: Samsung MBCFET architecture and performance comparison with FinFET
Table 5: TSMC FinFlex chips performance comparison and architecture
Table 6: TSMC N3E and N2 chips performance comparison and GAAFET architecture
Table 8: Comparison of different transistor architectures of Intel