Status of global wafer foundry industry, 2023

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Home Tech Semiconductors

Samsung makes breakthrough in 0.10-micron process

Hans Wu, Taipei; Jack Lu, DIGITIMES Asia Monday 12 April 2004 0

South Korea-based Samsung Electronics has recently improved yield rates for its 0.10-micron DRAM process after resolving problems with alumina-aluminium oxide (Al₂O₃) dielectric, according to sources.

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