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Germany’s EV subsidies mostly benefited Tesla, while China-made vehicles followed

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China’s polysilicon makers set a cost floor as solar losses widen

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Memory giants hold US$38 billion in cash collateral as buyer leverage may return in 2029

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Fudan researchers unveil room-temperature single-electron memory using 2D materials

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Powdec announces breakthrough GaN transistor design

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Mar 28, 2011, 14:44 1

Japan-based Powdec has announced that together with Sheffield University, they have succeeded in developing breakthrough high-voltage GaN power transistors...

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EDOM Accelerates Edge AI Deployment with NVIDIA Technologies

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