CONNECT WITH US

IDMs migrating to 8-inch fabs for SiC, GaN components production

Julian Ho, Taipei; Willis Ke, DIGITIMES Asia 0

Credit: DIGITIMES

With third-generation compound semiconductors SiC and GaN increasingly used in power devices for electric vehicle (EV) and server applications, international IDMs are actively migrating to 8-inch from the mainstream 6-inch wafer processing to enhance...

The article requires paid subscription. Subscribe Now