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News tagged GaN
  • Last update: Wednesday 1 April 2015 [16 news items]

220 GaN MOCVD reactors to be installed in 2015, says IHS

Apr 1, 10:54

Due to the major aggressive expansion plans of some China-based LED companies, IHS forecasts that 220 gallium nitride (GaN) reactors will be installed in 2015. This new capacity expansion...

GaN LEDs in automotives to reach US$1 billion in 2014, says IHS

Oct 22, 16:10

The market for GaN packaged LEDs in automotive applications is forecast to reach the US$1 billion mark in 2014 for the first time, according to IHS.

Epistar to reach 15% GaN wafer capacity market share following FOREPI merger, says IHS

Jul 3, 15:36

Following the announcement on June 30 that Epistar is acquiring Formosa Epitaxy (FOREPI), Epistar will have over 400 MOCVD reactors including those from FOREPI's China subsidiaries,...

GaN LED revenues increase 10.6% in 2013 but fast growth is coming to an end, says IHS

Feb 14, 10:56

Driven by surging demand from the lighting, tablet and mobile backlighting segments, global revenues for GaN LED climbed 10.6% in 2013, but this could mark the last hurrah for the...

GaN-on-silicon LEDs forecast to increase market share to 40% by 2020, says IHS

Dec 6, 15:51

The penetration of gallium nitride-on-silicon (GaN-on-Si) wafers into the LED market is forecast to increase at a CAGR of 69% from 2013 to 2020, by which time they will account for...

Sanan could lead in GaN LED wafer capacity by end of 2014, says IHS

Oct 18, 12:06

China-based die vendor Sanan is projected to take the lead in GaN LED wafer capacity by the end of 2014, overtaking current leader Epistar of Taiwan, according to IHS.

GaN LED shipments to exceed 100 billion units in 2013, says IHS

Jun 25, 10:22

More than 100 billion gallium nitride light-emitting diodes (GaN LED) will ship in 2013 - the equivalent of 15 for every person on the planet using this particular type of lighting...

GaN and SiC Power IC market set to rise by factor of 18 from 2012 to 2022, says IHS

Apr 25, 20:46

The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from...

Si-based GaN difficult to replace sapphire, says TSMC SSL president

Jan 21, 22:28

Toshiba and US-based Bridgelux will reportedly start volume production of 8-inch Si-substrate GaN wafers for use to make LED chips in the first quarter of 2013, according to Taiwan-based...

TSMC SSL president Jacob Tam

GaN-on-silicon for power conversion, who are the likely winners in the commercialization race, asks Petrov Group

Dec 10, 11:06

The high importance of GaN-on-Si technology for power conversion applications is by now evident, says Boris Petrov, managing director of the Petrov Group. It is driven by cost and...

Explosive growth in next-generation power semiconductors expected, says Information Network

Nov 16, 09:55

Traditional silicon-based power semiconductors are reaching their theoretical limitations. Fortunately because of their superior material properties, wide-bandgap power semiconductor...

Epistar and Toyoda Gosei sign cross license agreement on LED-related patents

Sep 16, 15:09

Epistar and Toyoda Gosei have entered a cross license agreement, allowing the companies and their subsidiaries the use of each other's patents for specific technologies in Group III-V...

Tekcore to raise fund for equipment purchase

May 12, 17:08

Board of directors of Taiwan-based LED chipmaker Tekcore has decided to issue 50 million new shares worth NT$1.5 billion (US$47.38 million) to raise fund for equipment purchase.

GaN power management IC market set for boom, says iSuppli

Mar 31, 10:03

The gallium nitride (GaN) power management semiconductor market is expected to reach US$183.6 million in revenues in 2013, up from virtually nil in 2010, according to iSuppli. The...

Military spending and GaN adoption driving RF power semiconductor markets, says ABI Research

Sep 9, 11:50

Although spending on RF power semiconductors in wireless infrastructure markets has continued to stagnate, other markets - notably the military - are seeing increased activity. Also,...

High Power Opto to acquire Aixtron MOCVD tool for production of GaN LED epiwafers

Sep 24, 12:17

AIXTRON AG today announced that Taiwan-based High Power Opto has placed an order for one AIX 2800G4 HT MOCVD system in the second quarter of 2008. High Power Opto will receive the...

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  • Panasonic+GaN+power+transistors

    Panasonic GaN power transistors

    Panasonic has announced that it will launch the industry's smallest enhancement-mode gallium nitride (GaN) power transistors (X-GaN) package. The GaN is encapsulated into 8x8 dual-flat...

    Photo: Company, May 20.

  • Veeco+TurboDisc+K465i+GaN+MOCVD+system

    Veeco TurboDisc K465i GaN MOCVD system

    Veeco Instruments has introduced a new gallium nitride (GaN) MOCVD system for production of high-brightness (HB) LEDs - the TurboDisc K465i. The new TurboDisc K465i can drive LED...

    Photo: Company, Jan 21.

Kromax
Taiwan server shipment forecast and industry analysis, 2015

4-Sep-2015 markets closed

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Demand and supply trends in the global sapphire industry, 2014-2015
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