- 3 Feb 2011:The profit gain was largely due to "a significantly improved performance in electronic devices, driven mainly by the return to profit of the LCD business and demand expansion in NAND flash memories," Toshiba said in a statement.
- 27 Dec 2010:Intel was expected to be a capital spending and production partner in the Singapore fab. However, Intel "is not participating" in terms of capital spending in the Singapore fab, said Micron CEO Steve Appleton. Still, over time, analysts said that Micron will go it alone in NAND and without its partner, Intel.
- 23 Dec 2010:Micron Technology said it expects prices for NAND to drop another 10% in the current quarter but pointed to signs of improvement as demand for the chips used in smartphones, tablets and solid-state hard drives grows.
- 22 Dec 2010:The upgrade reflects improving 2011 prospects for NAND flash memory demand, driven by tablets, smartphones and solid-state drives. The improving demand picture offsets concerns about higher supply due to new NAND fabs from Samsung, Toshiba and Micron expanding production in 2011.
- 14 Dec 2010:Micron says some flash controller jobs are going to migrate down stack towards the NAND chips, freeing up controller manufacturers from chip-dependent work they shouldn't be doing. It sees low-level flash controllers developing and taking on error management, taking this job away from existing NAND controllers.
- 10 Dec 2010:ASML now expects fourth-quarter bookings to be above two billion euro. "NAND flash memory investments for the high volume ramp of new technologies and foundry/logic commitments for new strategic fab projects are driving brisk lithography demand for 2011..."
- 9 Dec 2010:Toshiba's shipments of NAND flash memory chips may fall as much as 20% in January and February because of a power outage at a plant, the company said.
- 1 Dec 2010:For 2011, the fab tool growth will be driven by foundry and NAND to offset a "pause in DRAM" ...
- 23 Nov 2010:Shares of SanDisk jumped Monday after a Robert W. Baird analyst upgraded the stock, projecting better prices for the company's flash memory cards heading into next year. The analyst even predicted there could be NAND shortages in the second half of 2011.
- 15 Nov 2010:The sale of new tablet PCs and smartphones with solid-state storage technology is compensating for weak demand for memory cards and USB flash drives, and has led to a 17% quarter-to-quarter increase in NAND flash shipments and an average price drop of about 9%.
- 13 Oct 2010:The Nikkei business daily recently reported that the resistive random access memory chip to be developed by Elpida and Sharp could write data 10,000 times faster than NAND flash memory technology, while consuming less power. The next-generation memory chip is expected to be commercialized around 2013.
- 12 Oct 2010:OCZ Technology is teaming up with SandForce to deliver exceptional new SSD products that leverage SATA3 and cost-effective NAND flash components. OCZ is set to begin sample distribution to current and potential clients in the fourth quarter of 2010, with mass production beginning in the first quarter of 2011.
- 11 Oct 2010:One analyst says yes, saying that Micron is going it alone in NAND and without Intel. Intel is not commenting, saying the analyst is only speculating without hard data.
- 24 Sep 2010:In a nutshell, DRAM suffers from data and power concerns, NAND flash is plagued by reliability issues, and system integration is becoming more complex...
- 23 Sep 2010:SanDisk, Micron to benefit from strong enterprise NAND demand (Sep 22) - International Bussiness TimesThe analyst do not expect a meaningful acceleration in enterprise SSD adoption in 2010, but his analysis suggests as system availability improves in the second half of 2010, shipments are set to grow dramatically in 2011.
- 21 Sep 2010:Violin Memory has introduced a 40TB capacity flash memory array for enterprises that uses multi-level cell (MLC) NAND and costs less than US$16 per GB.
- 18 Sep 2010:"Memory fundamentals have slipped more rapidly than we had anticipated due to weak PC and consumer electronics demand," Auriga USA told clients, adding later: "It now seems highly likely that MU's gross margin will dip over the next several quarters as DRAM and NAND pricing continues to weaken."
- 11 Sep 2010:Pliant Technology has introduced a new family of lower-cost, higher-capacity solid state drives (SSD) based on consumer-grade NAND flash memory but built for data center use.
- 31 Aug 2010:As analyst Simon Dong-je Woo notes in a research report, TLC NAND pricing is down about 20% already in the current quarter. And he also reports that SanDisk has more exposure to TLC NAND than other players in the sector, accounting for 65% of the company's overall NAND chip sales.
- 14 Jul 2010:Toshiba has started construction of Fab 5 at Yokkaichi Operations, its memory production facility in Mie Prefecture, according to the company. The chip vendor also announced it has signed primary agreements with SanDisk for a new joint venture to operate the new facility.
- 31 May 2010:Surging memory market shake up top-20 chip vendors in 1Q10, says IC Insights (May 27) - Company releaseToshiba, Hynix, Micron and Elpida all moved up at least one position in the top 20 list, with Elpida jumping six spots.
- 19 May 2010:Intel has announced that Intel-Micron Flash Technologies are in mass production of their 25nm NAND flash memory, and Intel is shipping in volume to customers.
- 11 May 2010:The factory will be Toshiba's fifth at its manufacturing base in Yokkaichi in western Japan. It will initially be used to produce conventional NAND flash chips, but Toshiba plans to expand this to new types of 3D memory where chips and components are stacked vertically.
- 20 Apr 2010:Pacific Crest Securities has downgraded SanDisk to underperform, saying the maker of memory chips may be headed for a period of flat market dynamics.
- 6 Apr 2010:In the NAND flash rankings for 2009, there is a surprise vendor on the list. According to Web-Feet Research, Samsung Electronics remained the leader in NAND flash in terms of share, followed in order by Toshiba and then SanDisk. SanDisk was ahead of Micron, Hynix and Intel.
- 2 Apr 2010:Toshiba plans to spend 15 billion yen (US$160 million) in 2010 to build a test production line for advanced flash memory chips, according to the Nikkei business daily. The NAND flash memory vendor has already ordered chip-making equipment from ASML to produce microchips with circuitry widths of less than 25 nanometres.
- 10 Feb 2010:That's good news for Samsung, but bad news for its memory rivals that use ASML's tools, such as Elpida, Hynix, IM Flash, Micron, Nanya and others. NAND rival Toshiba is said to use scanners from Nikon.
- 9 Feb 2010:Hynix Semiconductor has claimed it has developed a NAND flash memory chip using 26nm process technology, designed to hold 64 gigabits of data.
- 5 Feb 2010:"I think in the next four years or five years, it's probably going to be the case that NAND will no longer be the storage medium," said a flash memory analyst with Forward Insights. "Everybody's looking at alternatives."
- Intel wants to avoid the cyclical, market share game in the NAND flash chip sector against the likes of Samsung, Hynix and Toshiba. But Intel dropped hints it wants to unseat Samsung as the No. 1 player in SSDs.
- 26 Jan 2010:Since the new device apparently will rely heavily on NAND flash for its computing and storage needs, and because the most recent products Apple has produced have tended to sell very well, the NAND flash industry may be looking at a major stabilizing factor.
- 23 Dec 2009:Micron said that it will be ''shortly'' sampling a 2x-nm NAND device. It did not specify the exact node, but some expect the company will disclose more details in early 2010.
- 21 Dec 2009:Toshiba may invest 200 billion yen (US$2.2 billion) to expand production of NAND flash memory by about 40% in April 2010, the Nikkan Kogyo newspaper reported without citing anyone.
- 11 Dec 2009:Hynix Semiconductor plans to invest about 2.3 trillion won (about US$2 billion) in its semiconductor business íV 1.5 trillion won in DRAM and 800 billion won in NAND flash memory and logic íV in 2010, a 130% jump from one trillion won this year.
- 9 Dec 2009:Hynix is slated to boost its production capacity of NAND flash memory at its 12-inch, Cheongju fab (M11) to 90,000 wafers per month in 2010 from the current level of 45,000 units, according to industry sources.
- 2 Dec 2009:Samsung Electronics plans to invest around seven trillion won (US$6.05 billion) in its semiconductor business for 2010 - five trillion won in DRAM and two trillion won in NAND flash memory and system LSI, according to industry sources.
- 30 Oct 2009:Samsung Electronics, the world's top maker of memory chips and LCD screens, reported on Friday its best ever quarterly net profit on a resurgent memory sector and forecast a strong 2010.
- 21 Oct 2009:The major supplier of NAND flash silicon invested "millions" in Fusion-io, said Fusion-io President and CEO David Flynn, though he declined to give a more specific figure. The two will jointly evaluate technology for new applications of solid-state storage.
- 11 Oct 2009:Samsung sees size and power benefits in phase-change memory (PCM), a memory type that is being pushed as a replacement for memory that goes into devices like mobile phones today.
- 1 Oct 2009:"Of course every transition to a new process has its problems," stated one source who requested anonymity. "We just weren't expecting it to be this slow."
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