- 13 Dec 2011:20nm seems to be the new cutting-edge process for memory production, but Intel and Micron might be surprised to find Hynix has just surpassed them. The Korean manufacturer has used the IEDM to announce it has managed to manufacture middle-1Xnm-generation NAND flash.
- 10 Dec 2011:Micron Technology is seeking Taiwanese partners to supply solid-state drive (SSD) controller chips to cope with the company's expansion in NAND memory chips in 2012, an executive said yesterday.
- 18 Oct 2011:Viking Technology has launched the ArxCis-NVTM DRAM memory module, which the company said can automatically detect I/O interrupts and back up data to NAND flash prior to an outage.
- 7 Oct 2011:Fusion-io has released the first upgrade to its in-server NAND flash card, the ioDrive2, doubling the card's speed, bandwidth and density, while maintaining its resiliency and endurance.
- 20 Sep 2011:While many experts have expressed doubts about the ability of flash memory to scale and indicated the need for an alternative non-volatile memory technology, Hynix has just gone ahead and produced a 15nm NAND flash memory cell which it plans to unveil at this year's International Electron Devices Meeting (IEDM).
- 23 Aug 2011:Texas Memory Systems challenges high-end hard drives with new flash product (August 23) - ComputerworldTexas Memory Systems, best known for its pricey, yet extremely high-performance NAND flash-based storage arrays, has introduced a new system that it said competes with Tier 1 hard drives on a price-per-gigabyte basis.
- 19 Aug 2011:A Wall Street analyst has predicted that Intel may acquire Micron Technology as the move would diversify its product offerings.
- 13 Aug 2011:SandForce has announced the first public demonstration of its SSD controllers working in concert with Toshiba's 24nm MLC NAND flash for SSD applications. SandForce also revealed that to data, it has shipped well over two million SSD controllers.
- 13 Jul 2011:Toshiba and SanDisk on July 12 celebrated the opening of Fab 5, the third 300mm wafer NAND fabrication facility at Toshiba's Yokkaichi Operations in Mie Prefecture, Japan.
- 22 Jun 2011:IM Flash Technologies, the NAND flash memory joint venture between Intel and Micron Technology, is expanding its operations in Lehi, Utah, and adding 200 jobs, according to a statement issued Monday (June 20) by Utah's Governor and the state's economic development office.
- 18 Jun 2011:Code-named Lyndonville, the 710 will be available in 100GB, 200GB, and 300GB capacities, and use MLC NAND flash storage. The 720 Series, or Ramsdale, will be the first Intel SSD line to use PCI Express (at least a PCIe x8 slot) as the interface instead of SATA...
- 25 Apr 2011:Shares of NAND flash drive maker SanDisk are off by US$1.68, or 3.4%, at US$47.31 after the company reported revenue and earnings per share for 1Q slightly ahead of expectations and said Japan's disaster would not derail its earnings outlook for the year.
- 14 Apr 2011:Intel and Micron Technology will make an announcement about NAND flash on April 14. The companies have not disclosed the details. "I believe that they will announce the finalization of their Singapore agreement-IMFS-that will bring up 25nm first and then 20nm later," said Alan Niebel, CEO of Web-Feet Research.
- 6 Apr 2011:IM Flash Technologies (IMFT), Intel and Micron's joint venture, released 25 nanometer (nm) circuitry a little over a year ago. In the next few weeks, IMFT plans to annouce 20nm NAND flash chip production.
- 12 Mar 2011:Japan's biggest-ever earthquake halted production briefly at Toshiba's chip plants on Friday and could delay crucial shipments. Toshiba and SanDisk share cutting-edge facilities in Yokkaichi, where they make NAND chips increasingly in demand by Apple and other mobile device makers.
- 11 Mar 2011:Fusion-io, a maker of NAND flash memory cards that enhance the performance of data center servers, has announced that it plans an initial public offering it hopes can raise US$150 million.
- 16 Feb 2011:"We are excited to complete the transition to the next generation 2Xnm NAND components which reiterates our strategy of producing high performance SSDs at the most attractive price point available for consumer applications," said Ryan Petersen, CEO of OCZ Technology.
- 3 Feb 2011:The profit gain was largely due to "a significantly improved performance in electronic devices, driven mainly by the return to profit of the LCD business and demand expansion in NAND flash memories," Toshiba said in a statement.
- 27 Dec 2010:Intel was expected to be a capital spending and production partner in the Singapore fab. However, Intel "is not participating" in terms of capital spending in the Singapore fab, said Micron CEO Steve Appleton. Still, over time, analysts said that Micron will go it alone in NAND and without its partner, Intel.
- 23 Dec 2010:Micron Technology said it expects prices for NAND to drop another 10% in the current quarter but pointed to signs of improvement as demand for the chips used in smartphones, tablets and solid-state hard drives grows.
- 22 Dec 2010:The upgrade reflects improving 2011 prospects for NAND flash memory demand, driven by tablets, smartphones and solid-state drives. The improving demand picture offsets concerns about higher supply due to new NAND fabs from Samsung, Toshiba and Micron expanding production in 2011.
- 14 Dec 2010:Micron says some flash controller jobs are going to migrate down stack towards the NAND chips, freeing up controller manufacturers from chip-dependent work they shouldn't be doing. It sees low-level flash controllers developing and taking on error management, taking this job away from existing NAND controllers.
- 10 Dec 2010:ASML now expects fourth-quarter bookings to be above two billion euro. "NAND flash memory investments for the high volume ramp of new technologies and foundry/logic commitments for new strategic fab projects are driving brisk lithography demand for 2011..."
- 9 Dec 2010:Toshiba's shipments of NAND flash memory chips may fall as much as 20% in January and February because of a power outage at a plant, the company said.
- 1 Dec 2010:For 2011, the fab tool growth will be driven by foundry and NAND to offset a "pause in DRAM" ...
- 23 Nov 2010:Shares of SanDisk jumped Monday after a Robert W. Baird analyst upgraded the stock, projecting better prices for the company's flash memory cards heading into next year. The analyst even predicted there could be NAND shortages in the second half of 2011.
- 15 Nov 2010:The sale of new tablet PCs and smartphones with solid-state storage technology is compensating for weak demand for memory cards and USB flash drives, and has led to a 17% quarter-to-quarter increase in NAND flash shipments and an average price drop of about 9%.
- 13 Oct 2010:The Nikkei business daily recently reported that the resistive random access memory chip to be developed by Elpida and Sharp could write data 10,000 times faster than NAND flash memory technology, while consuming less power. The next-generation memory chip is expected to be commercialized around 2013.
- 12 Oct 2010:OCZ Technology is teaming up with SandForce to deliver exceptional new SSD products that leverage SATA3 and cost-effective NAND flash components. OCZ is set to begin sample distribution to current and potential clients in the fourth quarter of 2010, with mass production beginning in the first quarter of 2011.
- 11 Oct 2010:One analyst says yes, saying that Micron is going it alone in NAND and without Intel. Intel is not commenting, saying the analyst is only speculating without hard data.
- 24 Sep 2010:In a nutshell, DRAM suffers from data and power concerns, NAND flash is plagued by reliability issues, and system integration is becoming more complex...
- 23 Sep 2010:SanDisk, Micron to benefit from strong enterprise NAND demand (Sep 22) - International Bussiness TimesThe analyst do not expect a meaningful acceleration in enterprise SSD adoption in 2010, but his analysis suggests as system availability improves in the second half of 2010, shipments are set to grow dramatically in 2011.
- 21 Sep 2010:Violin Memory has introduced a 40TB capacity flash memory array for enterprises that uses multi-level cell (MLC) NAND and costs less than US$16 per GB.
- 18 Sep 2010:"Memory fundamentals have slipped more rapidly than we had anticipated due to weak PC and consumer electronics demand," Auriga USA told clients, adding later: "It now seems highly likely that MU's gross margin will dip over the next several quarters as DRAM and NAND pricing continues to weaken."
- 11 Sep 2010:Pliant Technology has introduced a new family of lower-cost, higher-capacity solid state drives (SSD) based on consumer-grade NAND flash memory but built for data center use.
- 31 Aug 2010:As analyst Simon Dong-je Woo notes in a research report, TLC NAND pricing is down about 20% already in the current quarter. And he also reports that SanDisk has more exposure to TLC NAND than other players in the sector, accounting for 65% of the company's overall NAND chip sales.
- 14 Jul 2010:Toshiba has started construction of Fab 5 at Yokkaichi Operations, its memory production facility in Mie Prefecture, according to the company. The chip vendor also announced it has signed primary agreements with SanDisk for a new joint venture to operate the new facility.
- 31 May 2010:Surging memory market shake up top-20 chip vendors in 1Q10, says IC Insights (May 27) - Company releaseToshiba, Hynix, Micron and Elpida all moved up at least one position in the top 20 list, with Elpida jumping six spots.
- 19 May 2010:Intel has announced that Intel-Micron Flash Technologies are in mass production of their 25nm NAND flash memory, and Intel is shipping in volume to customers.
- 11 May 2010:The factory will be Toshiba's fifth at its manufacturing base in Yokkaichi in western Japan. It will initially be used to produce conventional NAND flash chips, but Toshiba plans to expand this to new types of 3D memory where chips and components are stacked vertically.
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