- 21 Mar 2017:Samsung Electronics said Tuesday its chip factory under construction in southern Seoul is expected to start production in the first half of 2017 as scheduled. The new line is expected to focus on the production of 3-D Vertical NAND (V-NAND) flash memory.
- 13 Mar 2017:As major player Toshiba's flash memory business is up for sale, global chipmakers are weighing their chances of competing against Samsung, which has a runaway lead in 3D NAND flash technology.
- 7 Feb 2017:South Korea's SK Hynix has entered the running for a stake in Toshiba's memory chip business, seeing an opportunity to gain on rivals in the booming NAND market, a person familiar with the matter said on Tuesday.
- 25 Jan 2017:Last week, Toshiba confirmed that it's looking to spin off its core semiconductor business. Toshiba's chip division includes its lucrative NAND memory business, which generated 15% of the group's JPY5.7 trillion annual revenue (about $50 billion), and has an estimated value of about JPY1.5 trillion (about $13 billion).
- 30 Dec 2016:Samsung Electronics plans to mass produce 64-layer NAND flash memory for the first time in the world early in 2017, while SK hynix plans to mass produce 72-layer NAND flash in the second half of 2017 jumping over 64-layer NAND flash.
- 26 Dec 2016:SK Hynix, one of South Korea's leading manufacturers of memory semiconductors, plans to leapfrog rival Samsung Electronics to mass produce the most-advanced generation of NAND flash - chips that feature 72 layers of data-storing cells.
- 20 Dec 2016:Samsung was Apple's main supplier for the iPhones from the very beginning, making the A-series processors and supplying both NAND flash and DRAM memory chips.
- 15 Dec 2016:According to the company, the output of 3D NAND at its fabs has surpassed the output of 2D NAND in terms of bits. Meanwhile, the costs of the first-generation 3D NAND are in line with expectations and the company is gearing up to start high-volume production of its second-gen 3D NAND in the coming weeks.
- 12 Sep 2016:Tech giant Samsung Electronics is gearing up to fully operate a production line for 3D NAND flash memory at its plant in Hwaseong City, Gyeonggi Province. Considering the one-month period to build the equipment and tools, it is expected that the facility will likely be in full operation around the end of 2016.
- 29 Jul 2016:We note that Intel has been building new capacity at Dalian - it could be cheaper for Intel to buy NAND capacity from Micron than to invest in expanding new capacity at Dalian.
- 21 Jul 2016:Toshiba is planning to start the manufacturing of the world's first 64-layer 3D NAND flash memory chips in the third quarter of 2016 with Samsung Electronics being expected to release the same type of products in the following quarter.
- 18 Jul 2016:Applied Materials next-generation e-beam inspection system provides industry's highest resolution (Jul 11) - Company releaseApplied Materials has announced its next-generation e-beam inspection system is delivering the highest resolution and image quality at the fastest throughput to leading foundry, logic, DRAM and 3D NAND customers as they move to advanced nodes.
- 15 Jun 2016:The announcement comes after Korean news media reported that Samsung is planning to invest around KRW25 trillion (US$21.2 billion)- some claimed KRW2.5 trillion - to beef up its production lines for 3D NAND flash memory in Hwaseong, Gyeonggi Province.
- 14 Apr 2016:Samsung Electronics is widening its lead with competitors in the solid-state drive (SSD) market, which is considered a growing field in the NAND memory semiconductor industry, dominating the market.
- 15 Feb 2016:Micron announced that it is shipping 2 bit per cell flash memory (MLC) and three bit per cell (TLC) 3D flash memory and that the majority of its total NAND flash output will be on 3D NAND by the second half of 2016.
- 24 Nov 2015:If Tsinghua Unigroup is unable to acquire the necessary IP to build 3D NAND, I believe the Chinese company will scrap its plan to build the new fab.
- 13 Oct 2015:
- 17 Jul 2015:Altera has developed a storage reference design based on its Arria 10 SoCs, which doubles the life of NAND flash and can increase the number of program-erase cycles by up to 7X compared to current NAND flash implementations.
- 28 Apr 2015:Samsung Electronics has inked an agreement to produce its 3D NAND solid state drives for Google, in a deal deemed to beef up the South Korean manufacturer's gameplay against its global competitors.
- 27 Mar 2015:
- 13 Nov 2014:Spansion has launched a family of industrial-grade e.MMC NAND memory products for the consumer, communication and industrial equipment markets.
- 10 Nov 2014:According to industry sources, Apple has decided to discontinue its use of triple-level cell (TLC) NAND, since the company believes that the functional defects plaguing the 64GB iPhone 6 and the 128GB iPhone 6+ stem from a problem in the controller IC of the TLC NAND flash. The controller IC in question is reportedly made by SSD maker Anobit, which was sold to Apple in 2011.
- 4 Nov 2014:As numerous reports of low read performance of the Samsung SSD 840 and 840 EVO using TLC NAND flash have surfaced on the Internet, a problem in the controller IC is considered to be the more likely cause of the defects.
- 26 Feb 2014:Toshiba develops device controller for embedded NAND flash memory module compliant with JEDEC UFS Ver.2.0 standard (February 25) - Company releaseToshiba has developed what it claims is the world's fastest device controller for embedded NAND flash memory modules compliant with the Universal Flash Storage (UFS) Ver.2.0 and UFS Unified Memory Extension (UME) Ver.1.0 standards defined by JEDEC Solid State Technology Association (JEDEC).
- 27 Jun 2013:With Toshiba's existing chip facilities now running at full capacity, the company may spend some of a 38% hike in its capex budget this year on extending a factory, the company's incoming president, Hisao Tanaka, said in a recent interview.
- 1 Jun 2013:
- 22 May 2013:Toshiba said it will soon begin mass producing a new type of 64Gbit NAND flash that is the smallest and fastest in its class, though it still lags rival Samsung Electronics in the development of an even denser flash technology.
- 16 Apr 2013:Increased spending in NAND and flash by Micron, LEDs by Philips and Osram, and continued investments by Globalfoundries will create new opportunities for equipment and materials suppliers in Southeast Asia.
- 10 Mar 2013:Industry consolidation to just three big DRAM suppliers and a reduction in capital expenditures among these manufacturers helped propel DRAM average selling prices (ASPs) up 13% year over year in January. Capex budgets are also being trimmed for NAND flash (though not nearly as much as DRAM), and that, along with ongoing unit demand, has put upward pressure on ASPs for these memory devices as well.
- 11 Jan 2013:New Micron and Crucial M500 SSDs offer affordable, high-capacity storage (January 10) - Company releaseThe M500 SSD utilizes Micron's 20nm multilevel cell (MLC) NAND flash to achieve terabyte-class capacity and enable a new level of SSD price competitiveness; the 960GB Crucial M500 SSD will be initially priced under US$600.
- 8 Sep 2012:Apple instead picked Japan's Toshiba, Elpida Memory and Korea's SK Hynix to supply DRAM and NAND chips.
- 14 Aug 2012:Micron Technology CEO Mark Durcan said he expects the market for chips that store files in mobile devices to improve in the first half of 2013 as manufacturers rein in supply increases.
- 22 Jun 2012:Micron Technology has acquired Intel's 18% interest in IM Flash Singapore and the assets of IM Flash Technologies located at Micron's Virginia wafer fab. At the same time the scope of the JV between Intel and Micron has been expanded to include certain emerging memory technologies and Intel has prepaid US$300 million against future purchases of NAND flash memory.
- 11 Jun 2012:LSI has announced several demonstrations of its SandForce SF-2000 flash storage processors using Toshiba 19nm and Intel 20nm NAND flash memory - the most advanced flash memory technology currently available for SSD applications.
- 24 May 2012:Spansion's five-year technology roadmap includes 1Gb-8Gb SLC NAND solutions on 4Xnm technology today, 3Xnm technology by end of 2012 and 2Xnm in 2014.
- 4 Apr 2012:
- 29 Feb 2012:Intel and Micron Technology have entered into agreements to expand their NAND flash memory joint venture relationship. The agreements include a NAND flash supply agreement for Micron to supply NAND products to Intel and agreements for certain joint venture assets to be sold to Micron.
- 24 Feb 2012:"Industry experts - even the best ones - are often shortsighted, and sometimes outright wrong," said Eli Harari at ISSCC on Monday. "And therefore, perseverance in the face of naysayers sometimes does pay off. And in the case of NAND, big-time."
- 17 Feb 2012:As the circuitry of NAND flash-based, solid-state drives shrinks, performance drops precipitously - meaning the technology could be doomed, according to new research.
- 7 Jan 2012:Marvell Friday launched what it's calling the industry's first PCI Express (PCIe) NAND flash controller, which it describes as a building block that allows solid state drive (SSD) and system manufacturers to scale products up or down in capacity and performance using commodity hardware.
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