Bits + chips
Samsung announces mass production of 256Gb, 3D V-NAND flash memory
Press release; Jessie Shen, DIGITIMES

Samsung Electronics has begun mass producing 256Gb, three-dimensional (3D) vertical NAND (V-NAND) flash memory based on 48 layers of 3-bit multi-level-cell (MLC) arrays for use in solid state drives (SSDs), according to the company.

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