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Oki Electric develops power GaAs MESFET with high drain efficiency

Press release; John McClure, DIGITIMES Asia Tuesday 19 April 2005 0

Oki Electric Industry today announced it has developed a power Gallium Arsenide (GaAs) Metal Semiconductor Field Effect Transistor (MESFET) for 10-watt wireless communication, which achieves a high drain efficiency. Oki plans to start sample shipments...

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