Samsung rolls out 0.15-micron, 512Mbit flash

Compiled from outside sources by Nero Shih, Research Center; Noah Sauve, DIGITIMES Asia Monday 9 July 2001 0

Samsung Electronics has announced that it is about to initiate volume production of 0.15-micron 512Mbit NAND flash memory and 1Gbit NAND flash made from two stacked 512Mbit die. Samsung’s new flash is made with a high coupling ratio cell design,...

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