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Power MOSFETs optimized for low voltage operation
Photo: Company [Oct 30, 2008]

Diodes has announced a significant expansion of its power MOSFET product range with the introduction of new devices suitable for load and switching functions in a variety of consumer, communication, computing and industrial applications. Covering both its Diodes and Zetex product lines, the additions include twenty seven 30V logic level and nine 20V low threshold N, P and complementary MOSFETs in a choice of industry standard packages.

Offered in SOT323, SOT23, SOT26 and SO8 formats, all power MOSFETs are pin and footprint compatible with existing devices and provide a competitive price-performance ratio, enabling either a reduction in BOM or improved performance at no extra cost. For DC/DC conversion and general power management duties, these latest MOSFETs will benefit a diverse range of new product designs including LCD TVs and notebook computers.

Diodes' 30V logic level power MOSFETs cover an on-resistance range from 190mΩ at 10V VGS for a SOT23 P-channel, through to 9mΩ at 10V VGS for an SO8 N-channel MOSFET. On-resistance of these devices are also specified at 4.5V VGS for logic level operation. The turn on gate threshold voltage for the P- and N-channel device is -1V and +1V respectively.

The 20V low threshold MOSFET introductions have on-resistances specified at 2.5V VGS and 1.8V VGS, being typically 240mΩ in the SOT23 package through to 9mΩ in an SO8. The turn on gate threshold voltage for the P- and N-channel device is -0.6V and +0.6V respectively.

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