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Evaluation of ruggedness across various generations of power MOSFETs and implications on in-circuit performance

Company [Friday 3 June 2011]

This paper evaluates single-pulse avalanche capacity, FBSOA, and body-diode reverse recovery ruggedness on different generations of middle-voltage MOSFETs. By pointing out the strengths and weaknesses of existing generations, this evaluation will provide knowledge that users need for properly selecting and better utilizing existing MOSFETs technology.

Categories: Semiconductor/Components, Optoelectronics/Green energy | Posted: Jun 3, 11:03 | More info


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