LandMark Optoelectronics, a maker of GaAs- and InP-based epitaxial wafers used to make laser diodes and photo detectors for optical communications, will expand production capacity by 20% through adding four MOCVD sets to reach 18 in total in the fourth quarter of 2015, according to the company.
Being a partner of Intel Silicon Photonics' research project, LandMark Optoelectronics started production of silicon (Si)-based epitaxial wafers at the end of the third quarter of 2015 and two of the aforementioned four MOCVD sets will be used to produce such wafers, the company said. LandMark Optoelectronics expects GaAs- and InP-based epitaxial wafers to account for 80-85% of 2015 consolidated revenues and Si-based epitaxial wafers for 15-20%.
LandMark Optoelectronics recorded consolidated revenues of NT$552 million (US$16.8 million), gross margin of 66.79%, net operating profit of 320 million, net profit of NT$279 million and net EPS of NT$3.08 for the third quarter, leading to consolidated revenues of NT$1.407 billion, gross margin of 65.32%, net operating profit of NT$801 million, net profit of NT$678 million and net EPS of NT$10.30 for January-September.
Article translated by Adam Hwang
