Winbond Electronics' W25N01JW is a high-performance, 1.8V serial NAND flash memory IC delivering a data-transfer rate of 83MB/s via a quad serial peripheral interface (QSPI). The new high-performance serial NAND technology also supports a two-chip dual quad interface which gives a maximum data transfer rate of 166MB/s. The Winbond 1.8V W25N01JW chip can replace SPI NOR flash memory in automotive applications, such as data storage for instrument clusters or the center information displays (CIDs), the company indicated. This is important for automotive OEMs because the adoption of more sophisticated graphics displays in the instrument cluster, and larger display sizes of seven inches and above in the CID, is increasing system memory requirements to capacities of 1Gbit and higher, the company continued. At these capacities, serial NAND flash has a markedly lower unit cost than that of SPI NOR flash, and occupies a smaller board area per megabit of storage capacity. The W25N01JW also meets strict automotive requirements for quality and reliability, Winbond noted. Built with single-level sell (SLC) memory technology, and implementing 1-bit error correction code (ECC) on all read and write operations, it complies with the endurance, retention and quality requirements of the AEC-Q100 standard and relevant JEDEC specs. The W25N01JW is available for sampling today in a capacity of 1Gbit. A two-chip implementation in dual-quad I/O mode provides 2Gbits of memory capacity and a maximum data transfer rate of 166MB/s. The chip is available in industrial grade and in an extended-temperature automotive grade version operating at up to 105-degrees C.

Winbond Electronics has announced an expansion of its flash product portfolio with the introduction of its lowest-voltage SpiFlash memories to date. At 1.2 and 1.5V, and in 8-pin packages, these newest members of the SpiFlash family provide designers with serial flash memories for audio, wearable, IoT and other demanding applications that call for low power in small packages. The 1.2V products cover an operating voltage range from 1.14V to 1.3V, which is ideal for very-low-power designs, Winbond said. The 1.5V devices have a wider operating voltage range, from 1.14V through 1.6V. The first product in the family, the W25Q80NE at 8Mb density at 1.2V is available in samples and will be available in production in the beginning of 2018, according to Winbond. The rest of the family of products ranging from 1Mb through 128Mb density at 1.2V, and wide range from 1.5V to 1.2V will follow.

Winbond Electronics has announced an expansion of its flash product portfolio with the introduction of a family of stackable SpiFlash memory devices. The new SpiStack W25M Series is Winbond's first to allow the "stacking" of homogeneous or heterogeneous flash, thus achieving memories of varying densities for code and/or data storage, while providing designers with the flash solutions most appropriate for their design requirements. The Winbond SpiStack W25M series provides a wide range of densities in the well-established 8-pin package to which designers are accustomed. Additionally, W25M memories feature the popular, multi-IO SpiFlash interface and command set. SpiStack homogeneous memories are achieved by stacking SpiFlash dies. For example, two 256Mb dies combining to form a single SpiFlash 512Mb NOR memory in the industry-standard 8-pin 8x6mm WSON package. Winbond's stacked product, W25M512JV, is also available in the widely used 16-pin SOIC or 24-pad BGA packages and is sampling now. SpiStack heterogeneous memories call for the stacking of a NOR memory with a NAND die, such as a 64Mb SpiFlash NOR blended with a 1Gb Serial NAND die, which gives designers the flexibility to store code in the NOR die and data in the NAND memory. Winbond's SpiFlash memory devices are manufactured at the company's 12-inch wafer fabrication facility in Taichung, Taiwan.