中文網
Taipei
Mon, May 23, 2022
01:56
cloudy
23°C
CONNECT WITH US
NEWS TAGGED NAND FLASH
Friday 20 May 2022
Adoption of QLC SSDs to accelerate in 2023
Chipmakers' entry into the race for 200-plus-layer 3D NAND flash chips will be accelerating the adoption of QLC SSDs particularly in the consumer sector in 2023, according to industry...
Wednesday 18 May 2022
Datacenters to become biggest consumer of NAND flash in 2023-2024
NAND flash demand for datacenter applications will be rising robustly, with bit shipments likely to outpace those for handsets between 2023 and 2024, according to Wallace Kou, president...
Tuesday 17 May 2022
YMTC sampling 192-layer 3D NAND chips
China's Yangtze Memory Technologies (YMTC) has delivered samples of its in-house developed 192-layer 3D NAND flash memory to a few customers recently, according to industry sources...
Monday 16 May 2022
The memory industry (6): When line between memory and logic IC becomes blurred
In 1984, Intel decided to exit the DRAM business, which marked the start of technology diversion between memories and logic IC. In hindsight, Intel's decision made sense. Memories...
Friday 13 May 2022
The memory industy (5): Looking for a new biz model that can create new value
When the memory industry can no longer leverage Moore's Law to create new value, it has to find new technologies to establish a new business model that can create new economic valu...
Thursday 12 May 2022
The memory industry (4): Technology diversion between DRAM and 3D NAND flash
In 2014, 3D NAND flash was introduced to the industry with 24 layers, and it co-existed with 2D NAND flash until 2017. 3D NAND flash gradually came to dominate the market with its...
Wednesday 11 May 2022
The memory industry (3): Taiwan's DRAM sector
Let's take a moment to review the rise and fall of Taiwan's DRAM industry. Taiwan's DRAM industry came into being in the mid-1990s. In the beginning, although some companies wanted...
Tuesday 10 May 2022
The memory industry (2): The era of makers utilizing manufacturing processes and equipment for both DRAM and 2D NAND flash
NAND flash was invented by Toshiba in 1989 and entered commercial mass production in the early 2000s. Since NAND flash has much faster access speed than mechanical hard drives, and...
Monday 9 May 2022
The memory industry (1): The era of DRAM driving semiconductor manufacturing process improvement
Semiconductor is a high-tech industry that requires continuous investment in the development of cutting-edge technologies to create new economic value. With the advantage of entering...
Friday 6 May 2022
MaxLinear to acquire Silicon Motion
MaxLinear and Silicon Motion Technology have entered into a definitive agreement under which MaxLinear will acquire Silicon Motion in a cash and stock transaction that values the...
Friday 6 May 2022
DRAM spot prices continue slide
DRAM spot prices have been falling since April and will continue trending downward in May and June, which will be dragging down further the memory contract prices in the second quarter,...
Tuesday 19 April 2022
Memory spot prices to continue slide in 2Q22
DRAM and NAND flash spot prices are expected to continue trending downward in the second quarter of 2022, prompting channel distributors to be conservative and to offload their inventories...
Monday 18 April 2022
Intel may farm out PC chipsets processing to OSATs in Taiwan
Intel reportedly is mulling expanding its outsourced backend operations to include PC-use chipsets, and Powertech Technology (PTI) is expected to become the first Taiwan-based OSAT...
Friday 15 April 2022
Phison expects consumer electronics demand to pick up in 2H22
Consumer electronics (CE) related demand will be picking up in the second half of 2022 despite recent weakness in the area, according to flash device controller supplier Phison Ele...
Thursday 7 April 2022
SK Hynix and Solidigm unveil their 1st collaborative product
SK Hynix and Solidigm have unveiled their first collaborative product, a new enterprise solid-state drive (eSSD), which combines the former chipmaker's 128-layer 4D NAND flash with...
Monday 11 June 2018
Winbond W25N01JW
Winbond Electronics' W25N01JW is a high-performance, 1.8V serial NAND flash memory IC delivering a data-transfer rate of 83MB/s via a quad serial peripheral interface (QSPI). The new high-performance serial NAND technology also supports a two-chip dual quad interface which gives a maximum data transfer rate of 166MB/s. The Winbond 1.8V W25N01JW chip can replace SPI NOR flash memory in automotive applications, such as data storage for instrument clusters or the center information displays (CIDs), the company indicated. This is important for automotive OEMs because the adoption of more sophisticated graphics displays in the instrument cluster, and larger display sizes of seven inches and above in the CID, is increasing system memory requirements to capacities of 1Gbit and higher, the company continued. At these capacities, serial NAND flash has a markedly lower unit cost than that of SPI NOR flash, and occupies a smaller board area per megabit of storage capacity. The W25N01JW also meets strict automotive requirements for quality and reliability, Winbond noted. Built with single-level sell (SLC) memory technology, and implementing 1-bit error correction code (ECC) on all read and write operations, it complies with the endurance, retention and quality requirements of the AEC-Q100 standard and relevant JEDEC specs. The W25N01JW is available for sampling today in a capacity of 1Gbit. A two-chip implementation in dual-quad I/O mode provides 2Gbits of memory capacity and a maximum data transfer rate of 166MB/s. The chip is available in industrial grade and in an extended-temperature automotive grade version operating at up to 105-degrees C.