18 news items tagged IM Flash
Top-5 semiconductor firms hold 53% of global wafer capacityThursday 13 February 2020
The world's top-five wafer capacity leaders each had capacity of more than 1,000,000 wafer starts per month, with their combined capacity representing 53% of the world's total wafer...
Micron exercises call option to acquire remaining stake in IM FlashTuesday 15 January 2019
Micron Technology has announced the company is exercising its right to purchase Intel's interest in the parties' joint venture, IM Flash Technologies.
Micron to acquire remaining stake in IM FlashFriday 19 October 2018
Micron Technology has announced that the company intends to exercise its right to call Intel's interest in the parties' joint venture, IM Flash Technologies.
Intel, Tsinghua Unigroup may team up to develop China NAND flash marketWednesday 10 January 2018
Intel is expected to enhance its presence in China's NAND flash market, with plans to ramp up the capacity of its 12-inch fab in Dalian and possibly to license its technology to Tsinghua...
Intel, Micron increase 3D XPoint manufacturing capacity with IM Flash fab expansionTuesday 14 November 2017
Intel and Micron Technology have announced the completion of an expansion to Building 60 (B60) at the IM Flash facilities in Lehi, Utah. The expanded fab will produce 3D XPoint memory...
Micron talks about its integrated global operationsWednesday 26 April 2017
Micron Technology has been actively allocating its global resources to enhance its DRAM and NAND flash product lines, according to Wayne Allan, VP of global manufacturing at the US-based...
Micron, Intel unveil 20nm 128Gb NAND flashWednesday 7 December 2011
Intel and Micron Technology have jointly announced a 20nm, 128Gb multilevel-cell (MLC) NAND falsh device. The companies also announced mass production of their 20nm 64Gb NAND.
Intel, Micron open US$3 billion NAND flash facility in SingaporeFriday 22 April 2011
Intel and Micron Technology have expanded their NAND flash memory joint venture operations with the official opening of IM Flash Singapore, according to the companies.
Intel, Micron shrink NAND flash to 20nmFriday 15 April 2011
Intel and Micron Technology have jointly introduced a 20nm process technology for manufacturing NAND flash memory, about one year after the pair announced 25nm NAND technology
Intel personnel change sparks speculation about future of MicronThursday 30 December 2010
Michael Chen, director of Intel's Asia-Pacific embedded sales and ultra-mobility group, has reportedly resigned from the company. The news comes after comments were made by the CEO...
Intel, Micron unveil 25nm NAND production processTuesday 2 February 2010
Intel and Micron Technology have jointly introduced a 25nm NAND flash production process technology, which provides a more cost-effective path for increasing storage capacity in today's...
PTI expects utilization rate to remain high in 1Q10Thursday 24 December 2009
Memory backend service supplier Powertech Technology (PTI) expects its capacity utilization for the upcoming first quarter to stay similar to levels in the fourth quarter of 2009...
Toshiba and SanDisk reportedly to begin sub-30nm NAND flash production in 2H10Monday 21 September 2009
Toshiba and its NAND flash partner SanDisk reportedly plan to begin mass producing NAND flash chips fabricated on 20nm-class process technology in the second half of 2010, according...
Intel, Micron to ship 3-bit per cell NAND flash in 4Q09Wednesday 12 August 2009
Intel and Micron Technology have jointly announced the development of a new 3-bit per cell multi-level cell (MLC) NAND technology for consumer storage devices such as flash cards...
IM Flash lowers 32Gb NAND chip spot price, sources sayMonday 20 July 2009
IM Flash Technologies, a joint venture between Intel and Micron Technology, has recently cut 32Gb NAND flash memory price to a level lower than rivals' in the spot market, according...
Enlarging price gap between DDR2 and DDR3 in spot market, says inSpectrumFriday 17 July 2009
With a positive market outlook for DDR3, the price gap between DDR2 and DDR3 increased further in the spot market, inSpectrum said.
IM Flash likely to beat Hynix in 2009 ranking, says DRAMeXchangeMonday 20 April 2009
IM Flash Technologies, a joint venture between Intel and Micron Technology, may overtake Hynix Semiconductor and become the third-largest NAND flash supplier worldwide in 2009, according...
IM Flash starts 34nm NAND flash productionTuesday 25 November 2008
Intel and Micron Technology has announced mass production of their jointly-developed 34nm, 32 gigabit multi-level cell (MLC) NAND flash memory device. Developed and manufactured by...
Intel SSD for netbooks and desktop PCs
Photo: Company, Wednesday 17 March 2010
Intel, Micron sampling 25nm 8GB NAND flash
Photo: Company, Wednesday 3 February 2010
Hard drive with NAND flash cheaper but more advanced
Photo: Terry Ku, Digitimes, Wednesday 26 November 2008