Fri, May 27, 2022
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NEWS TAGGED GAAS
Wednesday 11 May 2022
Taiwan III-V IC makers deliver samples for Wi-Fi 7 RF FEM
Taiwan-based gallium arsenide (GaAs) foundries and epi-wafer suppliers have started delivering epi-wafer samples, which are used in power amplifiers (PA) for Wi-Fi 7 radio-frequency...
Monday 28 March 2022
Golden decade looming for LEO satellite supply chain players
LEO (low Earth orbit) satellite communications will likely enter its first year of commercialization in 2022 and embrace a golden decade of development in the near future, prompting...
Monday 14 March 2022
SAIC aggressively aiming to operate as RF IDM
China-based Sanan Integrated Circuit (SAIC), a compound semiconductor specialist under Sanan Optoelectronics Group, is actively developing itself into an RF IDM to support the country's...
Tuesday 8 March 2022
Taiwan III-V IC makers gearing up for Wi-Fi 7 chip market boom
With RF integrated device manufacturers (IDMs) stepping up the development of power amplifiers (PAs) for Wi-Fi 7 FEM (front-end module) solutions, Taiwan-based gallium arsenide (GaAs)...
Friday 4 March 2022
RF FEM makers cut PA foundry orders for Wi-Fi applications
Taiwan's RF front-end module (FEM) makers, including RichWave Technology, have scaled down their wafer starts for power amplifiers (PA) with GaAS foundries such as Win Semiconductors...
Wednesday 2 March 2022
Taiwan makers see promising PA demand for defense applications
Taiwan-based companies engaged in the supply of compound semiconductor power amplifiers (PA) for defense applications are optimistic about demand in the long term, according to industry...
Tuesday 22 February 2022
Huawei taps deeper into third-generation semiconductor segment
Huawei's investment arm Hubble Technology Investment has recently purchased a 10% stake in Beijing TSD Semiconductor Equipment as the fifth largest shareholder in the supplier of...
Friday 21 January 2022
Taiwan compound semi output value increases 26% in 2021
Taiwan's compound semiconductor output value grew about 26% on year to NT$83.5 billion (US$3 billion) in 2021, according to statistics compiled by the Photonics Industry & Technology...
Tuesday 11 January 2022
Taiwan III-V IC makers gearing up for robust RF, PA demand
Taiwan-based gallium arsenide (GaAs) foundries including Win Semiconductors and Advanced Wireless Semiconductor (AWSC), and epi-wafer suppliers such as Visual Photonics Epitaxy Company...
Thursday 16 December 2021
Taiwan chipmakers gearing up for WBG semiconductors
Taiwan-based chipmakers, led by foundry TSMC and silicon wafer supplier GlobalWafers, are gearing up to tap into the market for gallium nitride (GaN), silicon carbide (SiC) and other...
Tuesday 14 December 2021
Taiwan companies increase investment in compound semiconductors
The Ministry of Economic Affairs (MOEA) has announced Win Semiconductors, the world's largest gallium arsenide (GaAs) wafer foundry, has been approved for the second time for the...
Tuesday 30 November 2021
Taiwan III-V IC makers poised to enjoy strong 1Q22
GaAs foundries Win Semiconductors, Advanced Wireless Semiconductor (AWSC) and Global Communication Semiconductors (GCS), IDM Transcom, and epi-wafer suppliers Visual Photonics Epitaxy...
Monday 15 November 2021
IntelliEPI sees GaN HEMT as new growth driver in 2022
Taiwan's epi-wafer supplier Intelligent Epitaxy Technology (IntelliEPI) has started taking orders for its high-performance GaN-based HEMT products, which are expected to serve as...
Tuesday 9 November 2021
Qualcomm growing presence in PA segment to benefit Taiwan III-V partners
As Qualcomm is actively expanding its presence in the GaAs-based handset PA segment, its partners in Taiwan including foundries Win Semiconductors and Advanced Wireless Semiconductor...
Wednesday 3 November 2021
GaAs foundry AWSC sees revenue slow down
GaAs foundry Advanced Wireless Semiconductor Company (AWSC) is likely to see a revenue slowdown in November and December after reaching the year's peak sales in October, as its China-based...
Friday 21 November 2014
IDT F0480 RF variable gain amplifier
Integrated Device Technology (IDT) has introduced the F0480, an internally matched 400-2700 MHz broadband radio frequency (RF) variable gain amplifier (VGA) designed to simplify the design process. The device delivers RF performance by combining IDT's glitch-free digital step attenuator, and zero-distortion technologies in a 5-by-5 package, the vendor said. The chip offers better moisture sensitivity and protection from electrostatic discharge (ESD) for a more reliable technology than gallium arsenide (GaAs) devices, which require external matching and can suffer from delayed secondary avalanching, IDT said. It is ideal for products such as cellular 4G base stations, broadband repeaters, distributed antenna systems and microwave backhaul equipment.
May 27, 10:24
Empower manufacturing with AI: Into new era of smart manufacturing with collective wisdom
Tuesday 24 May 2022
MSI unveils new lineup at Computex 2022 Online
Thursday 19 May 2022
STAr Technologies unveils one-touch memory test probe card
Thursday 19 May 2022
Computex Focus: DataVan to showcase new retail solutions for new normal
Renesas to reopen Kofu factory as 300mm wafer fab dedicated for power semiconductors
IC design houses bracing for cutback in orders from China handset brands
TSMC to move CoWoS-L technology to commercial production in 2 years
Intel makes key investments to advance datacenter sustainability
Concerns rising over potential foundry overcapacity in 2024
Apple car team reportedly in talks with Korean and Japanese suppliers
AMD, MediaTek reportedly in talks to form JV
TSMC to raise quotes for advanced, mature process technologies by 10-20%
BYD Semiconductor takes major stake in Energen
Is GF a good buy for Intel?
EV penetration to rise to 30% in 2025, says DIGITIMES Research
Non-foundry IC segments gaining weight in HPC era, says DIGITIMES Research
DIGITIMES Research worldwide notebook shipment update – February 2022
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