Infineon Technologies' OptiMOS Linear FET product family combines R DS(on) (on-state resistance) of a trench MOSFET with the wide safe operating area of a planar MOSFET. This solves the trade-off between R DS(on) and linear mode capability, according to the vendor. The OptiMOS Linear FET can operate in the saturation region of an enhanced mode MOSFET for hot-swap, e-fuse, and protection applications commonly found in telecom and battery management systems (BMS).
Both the rugged linear mode operation and the higher pulse current contribute to low conduction losses, faster start-up, and shorter down time, according to Infineon. The OptiMOS Linear FET prevents damage at the load if there is a short circuit, by limiting high in-rush currents.
The OptiMOS Linear FET is available in three voltage classes: 100 V, 150 V, and 200 V. They can be supplied in either a D2PAK or D2PAK 7pin package. These industry standard packages offer a compatible footprint for drop-in replacement.
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