Taipei, Friday, April 18, 2014 23:21 (GMT+8)
mostly cloudy
Taipei
25°C
Samsung 20nm DDR4 memory
Photo: Company [Sep 4, 2013]
Samsung 20nm DDR4 memory

Samsung Electronics has announced that it is mass producing what it calls the most advanced DDR4 memory for enterprise servers in next-generation data centers.

With the introduction of these high-performance, high-density DDR4 modules, Samsung can better support the need for advanced DDR4 in rapidly expanding, large-scale data centers and other enterprise server applications, the vendor said.

Early market availability of the 4Gb DDR4 devices, which use 20nm-class process technology, will facilitate demand for 16-GB and 32GB memory modules. This compares to conventional DRAM of which 8GB modules using a 30nm-class process technology are still commonplace.

In next-generation enterprise servers, the use of higher speed DRAM raises system level performance and lowers overall power consumption significantly. By adopting DDR4 memory technology early, OEMs can minimize operational costs and maximize performance to provide more favorable returns on investments.

Production of Samsung's 20nm-class 4Gb DDR4 follows the introduction of 50nm-class 2Gb DDR3 in 2008, culminating in a full-fledged transition to DDR4 for large-scale data centers and other enterprise applications in just five years. The 4Gb-based DDR4 has the fastest DRAM data transmission rate of 2,667 megabits per second - a 1.25-fold increase over 20nm-class DDR3, while lowering power consumption by more than 30%, the vendor said.

2014 global high brightness LED market
China touch tracker
2014 global mobile application processor market forecast