Taipei, Thursday, April 17, 2014 03:37 (GMT+8)
partly cloudy
Taipei
22°C
Intel 22nm 3D tri-gate transistor
Photo: Company [May 6, 2011]

Intel will introduce a 3D transistor design called Tri-Gate, first disclosed by Intel in 2002, into high-volume manufacturing at the 22nm node in an Intel chip codenamed Ivy Bridge.

The three-dimensional Tri-Gate transistors represent a fundamental departure from the two-dimensional planar transistor structure that has powered not only all computers, mobile phones and consumer electronics to-date, but also the electronic controls within cars, spacecraft, household appliances, medical devices and virtually thousands of other everyday devices for decades.

Scientists have long recognized the benefits of a 3D structure for sustaining the pace of Moore's Law as device dimensions become so small that physical laws become barriers to advancement, Intel said. The key to today's breakthrough is Intel's ability to deploy its 3D Tri-Gate transistor design into high-volume manufacturing, ushering in the next era of Moore's Law.

2014 China smartphone market and industry
China touch tracker
Global AMOLED market analysis and forecast, 2011-2015
  • China flat panel display industry outlook, 2013-2016

    This Digitimes Research Special Report outlines and analyzes the key trends and players that are influencing the continued development of China large-size and small-to medium size TFT LCD panel industry, while providing related growth forecasts for the industry through 2016.

  • TD-LTE market developments and forecast, 2014-2016

    TD-LTE has become the mainstream global choice for the construction of 4G asymmetric frequency spectrum networks. This Digitimes Research Special Report examines the current global status of TD-LTE, and forecasts developments in the TD-LTE supply chain in China and worldwide through 2016.