Taipei, Monday, April 21, 2014 11:21 (GMT+8)
mostly cloudy
Taipei
23°C
Samsung 512Mb MCP PRAM
Photo: Company [Apr 29, 2010]

Samsung Electronics has announced what it claims is the industry's first multi-chip package (MCP) with phase-change RAM (PRAM) for use in mobile phones.

The 512-megabit (512Mb) PRAM in the MCP is backward compatible with 40nm-class NOR flash memory in both its hardware and software functionality, providing handset designers the convenience of having multi-chip packaging fully compatible with past stand-alone PRAM chip technology, the vendor said.

PRAM, which stores data via the phase change characteristics of its base material, an alloy of germanium, antimony and titanium, provides three-times faster data storage performance per word than NOR chips, according to Samsung. The new PRAM-packaged memory combines the nonvolatile nature of flash memory with the high-speed capability of DRAM. Its simple cell structure makes designing MCP chips for handsets a faster and easier process, with the imminent use of 30nm-class and finer process node technology to overcome long-time design difficulties inherent in NOR flash technology.

As a replacement for NOR, PRAM can more easily accommodate the growing demand for high-speed, high-density nonvolatile memory in mobile phones and other mobile applications such as MP3 players, personal multimedia players and navigational devices, Samsung said.

2014 China smartphone market and industry
DIGITIMES Marketing Services
2014 global smartphone market forecast