Taipei, Sunday, December 28, 2014 21:16 (GMT+8)
mostly cloudy
Taipei
14°C
Micron, Nanya co-develop 2Gb DDR3 using 42nm process
Photo: Company [Feb 10, 2010]
Micron, Nanya co-develop 2Gb DDR3 using 42nm process

Micron Technology and Nanya Technology have announced that they have jointly developed a 2Gb DDR3 memory device using their new copper-based 42nm DRAM process technology.

The new 42nm process now makes 1.35-volts the standard compared to 1.5-volt with previous generations, providing power savings of up to 30% in computing applications.

Their new 2Gb 42nm DDR3 device delivers improved memory performance capable of reaching up to 1866 megabits per second, the companies said. In addition, the small die size coupled with the 2Gb density of the 42nm DDR3 device enables modules up to 16GBs.

Sampling is scheduled to start in the second quarter of 2010 with production ramp planned for the second half of the year.

Wireless broadband developments in Southeast Asia markets
DIGITIMES Marketing Services
DIGITIMES Translation Services
  • Wireless broadband developments in Southeast Asia markets

    As of 2013, the 10 ASEAN nations had a total of over 700 million mobile subscriptions, with the CAGR from 2003-2013 reaching 24%. This Digitimes Research Special Report analyzes the various mobile broadband markets in ASEAN and looks at the respective trends in 4G LTE development for those markets.

  • Greater China touch panel shipment forecast through 2015

    This Special Report provides forecasts through 2015 for Greater China touch panel shipments with breakdowns based on technology (glass, film, resistive), application (smartphone, NB and tablet) and by firm.

  • 2014 global tablet demand forecast

    This report analyzes the main players, their strategies and shipments forecasts for 2014, as well as other factors contributing to either growth or decline in various segments within the tablet market, with a particular focus on Apple, Google, Samsung, and Microsoft, along with whitebox vendors.