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Samsung 3-bit per cell NAND flash at 30nm
Photo: Company [Dec 4, 2009]

Samsung Electronics has commenced volume production of 3-bit, multi-level-cell (MLC) NAND flash chips using 30nm-class process technology. The chips will be used in NAND flash modules accompanied by exclusive Samsung 3-bit NAND controllers to initially produce 8GB microSD cards.

Three-bit MLC NAND increases the efficiency of NAND data storage by 50% over today's pervasive 2-bit MLC NAND chips. Samsung said its new 30nm-class 3-bit MLC NAND will provide consumers with effective NAND-based storage that can be applied to USB flash drives in addition to a range of micro SD cards.

Mass production of Samsung's 30nm 3-bit NAND is expected to significantly raise the portion of NAND flash memory production devoted to high densities (32Gb and above), designed to accommodate increased video usage, according to the company.

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