Taipei, Tuesday, August 22, 2017 21:23 (GMT+8)
scattered thunderstorms
Taipei
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Osram 50mW direct emitting green InGaN laser
Photo: Company [Aug 19, 2009]

Osram has overcome the previous limits of the InGaN (indium-gallium-nitride) material system by succeeding in manufacturing the direct emitting green laser diode from the InGaN material system, according to the company.

The diode emits a "true green" light, which is defined by the spectral range of 515-535nm. In this range, efficient high-quality semiconductor lasers have been commercially available to date only as frequency-doubled versions, it said.

In the medium term, however, direct emitting green lasers could replace frequency-doubled lasers for numerous applications, Osram remarked.

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