Taipei, Tuesday, December 1, 2015 12:26 (GMT+8)
mostly cloudy
Samsung 40nm 2Gb DDR3 to enter mass production by year-end
Photo: Samsung [Feb 19, 2009]

Samsung Electronics has recently announced that it has developed and validated the first 40nm DRAM chip and module.

This new 1Gb DDR2 component (x8) and a corresponding 1Gb 800Mbps DDR2 SO-DIMM - both to be processed at 40nm - have been certified in the Intel Platform Validation program for use with the Intel GM45 series Express mobile chipsets.

Samsung plans to apply its 40nm-class technology to also develop a 2Gb DDR3 device for mass production by the end of 2009.

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