Taipei, Thursday, August 28, 2014 07:17 (GMT+8)
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Taipei
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Hynix 40nm 1Gb DDR3
Photo: Company [Feb 9, 2009]

Hynix Semiconductor has developed 1Gb(gigabit) DDR3 DRAM using the company's 40nm-class process technology. Mass production is slated to begin in the third quarter of 2009.

The maximum speed of 1Gb DDR3 DRAM is 2133Mbps (megabit per second) and it operates at a wide range of voltage.

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