Taipei, Sunday, December 21, 2014 19:47 (GMT+8)
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Samsung announces 40nm memory device
Photo: Company [Sep 11, 2006]

Samsung Electronics today announced it has developed what it claims is the industry's first 40nm memory device.

The new 32Gbit NAND flash device is the first memory to incorporate a charge trap flash (CTF) architecture, a new approach that further increases manufacturing efficiency while greatly improving performance, according to Samsung.

The new CTF-based NAND flash memory increases the reliability of the memory by reducing inter-cell noise levels, said the company.

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