Taipei, Friday, July 25, 2014 13:00 (GMT+8)
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Samsung 30nm DDR4 DRAM
Photo: Company [Jan 5, 2011]

Samsung Electronics has completed development of what it calls the industry's first DDR4 DRAM module, using 30nm class process technology.

The new DDR4 DRAM module can achieve data transfer rates of 2.133 gigabits per second (Gbps)at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent 30nm-class process technology, with speeds of up to 1.6Gbps. When applied to a notebook, it reduces power consumption by 40 percent compared to a 1.5VDDR3 module, the vendor said.

Samsung revealed that in late December, it provided 1.2V 2GB DDR4 unbuffered dual in-line memory modules (UDIMM) to a controller maker for testing. The company said it now plans to work closely with a number of server makers to help insure completion of JEDEC standardization of DDR4 technologies in the second half of 2011.

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