Taipei, Friday, September 4, 2015 01:21 (GMT+8)
partly cloudy
Taipei
28°C
Hynix announces development of 2Gb mobile DRAM
Press release, December 3; Jessie Shen, DIGITIMES [Wednesday 3 December 2008]

Hynix Semiconductor has announced the development of 2Gb mobile DRAM chips using 54nm process technology.

The new Hynix 2Gb mobile DRAM boasts maximum operating speeds of 400Mbps at 1.2V power supply and processes up to 1.6 gigabytes per second with a 32-bit I/O.

Hynix' new 2Gb mobile DRAM, which meets JEDEC standard, is suited for the next-generation MID (Mobile Internet Device) and UMPC (ultra mobile PC) applications, according to the company.

Hynix has scheduled to kick off the mass production in the first half of 2009.

Hynix 2Gb mobile DRAM

Hynix 54nm 2Gb mobile DRAM
Photo: Company

Kromax
Trends and forecasts for the China FPD industry, 2014-2017
Demand and supply trends in the global sapphire industry, 2014-2015
  • Wireless broadband developments in Southeast Asia markets

    As of 2013, the 10 ASEAN nations had a total of over 700 million mobile subscriptions, with the CAGR from 2003-2013 reaching 24%. This Digitimes Research Special Report analyzes the various mobile broadband markets in ASEAN and looks at the respective trends in 4G LTE development for those markets.

  • 2015 global tablet demand forecast

    This Digitimes Research Special Report provides a 2015 forecast for the global tablet market and analyzes the strategies of key market players such as Google, Apple, Intel, and Microsoft.

  • 2015 China smartphone panel trend forecast

    This Digitimes Research Special Report analyzes the strategies of key China-based major panel makers BOE, Tianma and IVO for attacking the different market segments through technology and pricing, and their relationship to local vendors Huawei, Lenovo, ZTE, Xiaomi and Coolpad.