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Chartered offers MoSys embedded memory technology at 0.13-micron node

Press release; Jack Lu, DIGITIMES Asia Wednesday 5 November 2003 0

Singapore-based Chartered Semiconductor Manufacturing signed an agreement with MoSys to offer MoSys' 1T-SRAM-Q technology on Chartered's 0.13-micron process, according to its press release dated November 3.

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