Hynix adds 1Gb DDR3 built on 54nm
Press release; Jessie Shen, DIGITIMES [Monday 12 October 2009]
Hynix Semiconductor has announced its second-generation 1Gb DDR3 chip using 54nm process technology. The new 1Gb DDR3 chip available now in x4 and x8 configurations, and has been produced in mass volume from this month (October 2009).
The new Hynix 1Gb DDR3 operates at the same 1.5V power supply as Hynix' first-generation 1Gb DDR3 product, but further reduces power consumption by 30%. Highly virtualized applications such as data centers, servers and supercomputers as well as mobile applications requiring longer battery life could take advantage of the new chips to reduce power consumption, according to Hynix.
Hynix 54nm 1Gb DDR3